Qinghua Mao, Ph.D.

Department of Applied Mathematics

School of Microelectronics & Data Science

Anhui University of Technology

Research Interests

l Gallium Nitride Semiconductor devices;

l Perovskite Light emitting diodes;

Teaching Courses

l Introduction to Semiconductor Manufacturing Technology

Grants

l 201807-202106, Study on performance improvement of green LED based on variable temperature electroluminescence characteristic analysis, Natural Science Foundation of Anhui Province (grant no. 1808085MF205)

Selected Publications

1. Mao Q, Liu J, Wu X, et al. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. Journal of Semiconductors, 2015, 36(9): 093003.

2. Mao Q, Liu J, Quan Z, et al. Enhanced Performance of GaInN LEDs by Abrupt Mg Doped p-AlGaN Electron Blocking Layer[J]. ECS Journal of Solid State Science and Technology, 2014, 4(3): R44.

3. Qing-Hua M, Feng-Yi J, Hai-Ying C, et al. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates[J]. Acta Physica Sinica, 2010, 59(11): 8078-8082.

4. Qing-Hua M, Jun-Lin L, Zhi-Jue Q, et al. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode[J]. Acta Physica Sinica, 2015, 64(10).