Yu Lu, Ph.D.

lecturer

School of Microelectronics & Data Science

Anhui University of Technology

 

Research Interests

l GaN based LED & LD;

l GaN based power devices;

l GaN substrate.

 

Teaching Courses:

Physics of Semiconductor Devices; Semiconductor Device Physics Experiment.

 

Selected Publications

1. Y Lu, Y. Gong, J. Bai, R. Smith and T. Wang， “260 nm AlGaN quantum well structure with high performance grown on novel porous AlN buffer templates on sapphire” IWUMD-2018.

2. K. Liu, S.X. Mu, Y. Lu, B.L. Guan, and E.Y.B. Pun, “L-band wavelength-tunable MQW Fabry-Perot laser using a three-segment structure”, IEEE Photonics Technology Letters, Vol. 25, Issue 18, pp.1754-1757, Sep. 2013.

3. LU yu, YANG zhi-jian, PAN yao-bo, etc, “Effect of Al Doping in the IGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition” CHIN.PHYS.LETT, vol.23(1) , pp 256, 2006.

4. Luyu, zhijian Yang, xu ke, yaobo pan, etc. “High-resolution X-ray study of the AlGaN/GaN superlattices grown by Metalorganic Chemical vapor Depostion”, MOCVD2005, HuangShan, China.

5. Luyu, Wang Wei, Zhu Hong-Liang, etc, “Tunable Distributed Bragg Reflector laser fabricated by Bundle Integrated Guide (BIG)^” Chinese Journal of Semiconductors, 24(2), pp113-117, 2003.

6. Lu Yu, Zhang Jing, Wang Wei, etc, “Wavelength Tuning in Two-Section Distributed Bragg Reflector Laser by Selective Intermixing of InGaAsP-InGaAsP Quantum Well Structure”,Chinese J.Semiconductor, Vol.24, pp903, 2003.

7. Zhang Jing, Lu Yu, Wang Wei, “quantum well intermixing of InGaAsP QWs by impurity free vacancy diffusion using SiO2 encapsulation”, Chinese J.Semiconductor, Vol.24, pp785, 2003.

8. Zhang Jing, Lu Yu, Zhao Lingjuan, etc, “An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing” , Chinese J.Semicondctor, Vol.25, pp894, 2004.

9. Y.B. Pan, Z.J. Yang, Z.T. Chen, Y. Lu, T.J. Yu, X.D. Hu, K. Xu, G.Y. Zhang, “Reduction of threading edge dislocation density in n-type GaN by Si delta-doping”, Journal of Crystal Growth 286, pp255-258, 2006.

10. Yang zhi-jian Hu xiaodong Zhang Bei, Lu min, Lu yu, Pan yaobo, Zhang zhensheng, Ren qian, Xu jun, Li zhonghui, Chen zhizhong, Qin zhixin Yu tongjun, Tong Yuzhen, Zhang guoyi, “High quality GaN grown by epitaxial lateral overgrowth technique and epitaxial defects observation”, Chinese journal of luminescence, 26(1), pp72-76, 2005.

11.  yaobo Pan, zhijian yang, yu Lu, etc, “Improvement of properties of P-GaN By Mg Delta doping” CHIN.PHYS.LETT, vol.21 (10), pp2016, 2004.